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These devices combine the noise performance of the lowest noise amplifiers with the direct current precise previously only available in bipolar amplifiers. The combination of remarkable direct current and noise performance and a common-mode input voltage ranges with a negative rail makes these devices perfect for high-impedance, low-level signal conditioning applications in high-impedance or independent power source configurations, and the resolution is up to 1pA. Module inputs and outputs are designed to withstand -100mA inrush current without continuous latch-up. Wide applications, suitable for TIA transimpedance amplifier, weak current detection, conversion, silicon photo detection, photodetector.

Features:
These devices combine the noise performance of the lowest noise amplifiers with the direct current precise previously only available in bipolar amplifiers.
The process uses silicon gate technology to obtain input offset voltage stability, the temperature and time far beyond what can be achieved with metal gate technology.
Additionally, this technology makes it possible to let the input impedance levels to meet or exceed those expensive insulating isolation devices.
The combination of remarkable direct current and noise performance and a common-mode input voltage ranges with a negative rail makes these devices perfect for high-impedance, low-level signal conditioning applications in high-impedance or independent power source configurations, and the resolution is up to 1pA.
Module inputs and outputs are designed to withstand -100mA inrush current without continuous latch-up.
Care should be taken when handling these devices, exposure to ESD may results in degraded parametric performance.
Wide applications, suitable for TIA transimpedance amplifier, weak current detection, conversion, silicon photo detection, photodetector.

Specifications:
Name: Transresistance Amplifier Module
Material: printed circuit board
Module power supplys: +5V
Input channel: 1 channel
Input signal form: current input
Input frequency: <1KHz
Input noise voltage: 0.7uV@0.1Hz-10Hz
Feedback resistor (four gears optional):
Transimpedance R-3=1Gohm
Transimpedance R-4=10Mohm
Transimpedance R-5=0.1Mohm
Transimpedance R-6=1kohm (default R3).
Application type: TIA transimpedance amplifier, weak current detection, conversion, silicon photo detection, photodetector
Output channel: 1 channel
Operating temperature range: -40°C ~+85°°C
Chip parameters:
Module protection: power reverse polarity protection
Module interface type: power XH2.54-3P plug-in interface, SMA signal input and output!
Main chip: bias current is pA level, high precise
The relationship between the output voltage Vout and the input current I: Vout=I*R-3 (R-3 defaults to 1GOhm, input and output are in-phase relationship)
Circuit connection method: Using the typical transimpedance I/V circuit connection method, the current measurement with the highest accuracy in principle under the curre