1ตัว H25R1203 25R1203 TO-247 1200V25A Imported new high-power induction cooker IGBT tube
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1ตัว H25R1203 25R1203 TO-247 Imported new high-power induction cooker IGBT tube
H25R1203 H25R 1203 IGBT power transistor - 25A / 1200V
Specifications/Feature
Powerful monolithic body diode with low forward voltage designed for soft commutation only
very tight parameter distribution
high ruggedness,temperature stable behavior
lowVCEsat
easy parallel switching capability due to positive temperature coefficient in VCEsat
LowEMI
Qualified according to JEDEC for target applications
Pb-free lead plating; ROHS complaint
Collector-emitter voltage VCE: 1200 V
DC collector current,limited by Tvjmax IC: 40A at 25°C and 25A at 100°C
Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
VCEsat :1.48V at 25°C
Tvjmax :175°C
Applications:
Inductive cooking
Inverterized microwave ovens
Resonant converters
Softs witching applications
Electronics Projects
