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Power transistor IGBT 1200V 313W FGA25N120
Details
Designed for motor control, inverter, SMPS
Collector-emitter voltage: 1200V
current collector DC: 46V (at 25℃), 25V (at 100 ℃)
Time to resist short circuit: 10 s
Power dissipation: 313W (at 25℃)
FGA25N120 power transistor uses technology of the NPT which provides the distribution of very tight parameter, high robustness, the stable performance of the temperature and the parallel switching capacity.
This power transistor is designed for engine control, inverter and SMPS.
Color: As shown
Package Contents: 1 X Power transistor
Note:Light shooting and different displays may cause the color of the item in the picture a little different from the real thing.The measurement allowed error is +/-1-3 cm.
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![[ErudentT] ทรานซิสเตอร์พาวเวอร์ IGBT 1200V FGA25N120 ANTD 25N120 1 ชิ้น [ใหม่]](https://down-th.img.susercontent.com/file/sg-11134201-7rbn4-llkbxuowwu94da_tn)
